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IRFB4227PBF

Datasheet

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Specifications

Digi-Key Part Number IRFB4227PBF-ND
Manufacturer Infineon Technologies
Manufacturer Product Number IRFB4227PBF
Description MOSFET N-CH 200V 65A TO220AB
Detailed Description N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Category Discrete Semiconductor Products
Transistors – FETs, MOSFETs – Single
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current – Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
FET Feature
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRFB4227

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